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ptfa192001e PTFA192001F confidential, limited internal distribution data sheet 1 of 11 rev. 05, 2008-05-15 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! description the ptfa192001e and PTFA192001F are 200-watt ldmos fets intended for single- and two-carrier wcdma and cdma applications from 1930 to 1990 mhz. features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptfa192001e package h-36260-2 thermally-enhanced high power rf ldmos fets 200 w, 1930 ? 1990 mhz 2-carrier wcdma drive-up v dd = 30 v, i dq = 1600 ma, ? = 1960 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -55 -50 -45 -40 -35 -30 -25 34 36 38 40 42 44 46 48 output power, avg. (dbm) im3 (dbc), acpr (dbc) 0 5 10 15 20 25 30 drain efficiency (%) acpr efficiency im3 PTFA192001F package h-37260-2 features ? pb-free, rohs-compliant and thermally-enhanced packages ? broadband internal matching ? typical two-carrier wcdma performance at 1990 mhz, 30 v - average output power = 47.0 dbm - linear gain = 15.9 db - efficiency = 27% - intermodulation distortion = ?36 dbc - adjacent channel power = ?41 dbc ? typical single-carrier wcdma performance at 1960 mhz, 30 v, 3gpp signal, p/ar = 7.5 db - average output power = 48.5 dbm - linear gain = 15.9 db - efficiency = 34% - intermodulation distortion = ?37 dbc - adjacent channel power = ?40 dbc ? typical cw performance, 1960 mhz, 30 v - output power at p?1db = 240 w - efficiency = 57% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 5:1 vswr @ 30 v, 200 w (cw) output power *see infineon distributor for future availability.
data sheet 2 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution rf characteristics wcdma measurements (tested in infineon test fixture ) v dd = 30 v, i dq = 1.8 a, p out = 50 w average ? 1 = 1985 mhz, ? 2 = 1995 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 15.3 15.9 ? db drain efficiency h d 26.5 27 ? % intermodulation distortion imd ? ?36 ?34 dbc two-tone measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 30 v, i dq = 1.6 a, p out = 200 w pep, ? = 1960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 15.9 ? db drain efficiency h d ? 41 ? % intermodulation distortion imd ? ?30 ? dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.05 ? w operating gate voltage v ds = 30 v, i dq = 1.8 a v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 625 w above 25c derate by 3.57 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 200 w cw) r q jc 0.28 c/w
data sheet 3 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution intermodulation distortion products v. output power v dd = 30 v, i dq = 1600 ma, ? 1 = 1957.5 mhz, ? 2 = 1962.5 mhz -60 -50 -40 -30 -20 10 100 1000 output power, pep (w) im5 im7 intermodulation distortion (dbc) im3 up low broadband performance v dd = 30 v, i dq = 1600 ma, p out = 50 w 10 15 20 25 30 35 40 1860 1890 1920 1950 1980 2010 2040 frequency (mhz) gain (db), efficiency (%) -35 -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss *see infineon distributor for future availability. ordering information type and version package type package description marking ptfa192001e v4 h-36260-2 thermally-enhanced slotted flange, single-ended ptfa192001e PTFA192001F v4 h-37260-2 thermally-enhanced earless flange, single-ended PTFA192001F typical performance (data taken in a production test fixture)
data sheet 4 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution two-carrier wcdma at selected biases v dd = 30 v, ? = 1960 mhz, 3gpp wcdma signal, p/ar = 8 db, 10 mhz carrier spacing, series show i dq -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 output power, pep (dbm) 3rd order imd (dbc) 1.6 a 1.4 a 2.0 a 1.8 a 2.2 a typical performance (cont.) 2-tone drive-up v dd = 30 v, i dq = 1600 ma, ? = 1960 mhz, tone spacing = 1 mhz -60 -55 -50 -45 -40 -35 -30 -25 42 44 46 48 50 52 54 56 output power, pep (dbm) 10 15 20 25 30 35 40 45 drain efficiency (%) im5 efficiency im7 intermodulation distortion (dbc) im3 power sweep, cw conditions v dd = 30 v, i dq = 1800 ma, ? = 1990 mhz 12 13 14 15 16 17 0 40 80 120 160 200 240 output power (w) gain (db) 15 25 35 45 55 65 drain efficiency (%) gain efficiency t case = 25c t case = 90c intermodulation distortion products vs. tone spacing v dd = 30 v i dq = 1800 ma , ? = 1960 mhz, p out = 53 dbm pep -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 30 35 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th
data sheet 5 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution typical performance (cont.) output peak-to-average ratio compression (parc) at various power levels v dd = 30 v, i dq = 1500 ma, ? = 1990 mhz, single-carrier wcdma input par = 7.5 db 0.001 0.01 0.1 1 10 100 1 2 3 4 5 6 7 8 peak-to-average (db) probability (%) 52 dbm 50.5 dbm 50 dbm 48 dbm 46 dbm input power gain vs. power sweep (cw) over temperature v dd = 30 v, i dq = 1500 ma, ? = 1990 mhz 12 13 14 15 16 17 18 1 10 100 1000 output power (w) power gain (db) -15c 25c 85c voltage sweep i dq = 1800 ma, ? = 1960 mhz, tone spacing = 1 mhz, output power (pep) = 53 dbm -50 -40 -30 -20 -10 23 25 27 29 31 33 supply voltage (v) 3rd order intermodulation distortion (dbc) 10 20 30 40 50 gain efficiency im3 up gain (db), drain efficiency (%) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.44 a 1.32 a 2.20 a 3.30 a 6.61 a 9.91 a 13.22 a 16.52 a
data sheet 6 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution z source z load g s d frequency z source w z load w mhz r jx r jx 1900 8.033 ?8.054 0.943 2.60 1930 7.611 ?7.612 0.932 2.87 1960 7.230 ?7.197 0.886 3.15 1990 6.839 ?6.839 0.863 3.44 2020 6.541 ?6.496 0.829 3.71 see next page for circuit information broadband circuit impedance 0 . 1 0 . 2 0 . 1 0 . 1 n - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 2020 mhz 1900 mhz z load 1900 mhz z source 2020 mhz z 0 = 50 w
data sheet 7 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution reference circuit reference circuit schematic for ? = 1960 mhz circuit assembly information dut ptfa192001e or PTFA192001F ldmos transistor pcb 0.76 mm [.030"] thic k, e r = 3.48 rogers ro4350 1 oz. copper microstrip electrical characteristics at 1960 mhz 1 dimensions: l x w ( mm) dimensions: l x w (in.) l 1 0.038 l , 50.0 w 3.51 x 1.70 0.138 x 0.067 l 2 0.071 l , 50.0 w 6.60 x 1.70 0.260 x 0.067 l 3 0.022 l , 43.0 w 2.01 x 2.16 0.079 x 0.085 l 4 (taper) 0.060 l , 43.0 w / 6.9 w 5.28 x 2.16 / 20.32 0.208 x 0.085 / 0.800 l 5 0.040 l , 6.9 w 3.33 x 20.32 0.131 x 0.800 l 6 0.026 l , 6.9 w 2.21 x 20.32 0.087 x 0.800 l 7, l 8 0.123 l , 60.0 w 11.48 x 1.24 0.452 x 0.049 l 9, l 10 0.258 l , 50.9 w 23.88 x 1.65 0.940 x 0.065 l 11 0.067 l , 5.0 w 5.59 x 28.91 0.220 x 1.138 l 12 (taper) 0.017 l , 5.0 w / 7.2 w 1.42 x 28.91 / 19.51 0.056 x 1.138 / 0.768 l 13 (taper) 0.024 l , 7.2 w / 12.3 w 2.08 x 19.51 / 10.67 0.082 x 0.768 / 0.420 l 14 (taper) 0.019 l , 12.3 w / 41 w 1.78 x 10.67 / 2.29 0.070 x 0.420 / 0.090 l 15 0.009 l , 41.0 w 0.79 x 2.29 0.031 x 0.090 l 16 0.021 l , 41.0 w 1.85 x 2.29 0.073 x 0.090 l 17 0.096 l , 50.0 w 8.99 x 1.70 0.354 x 0.067 1 electrical characteristics are rounded. a 1 9 2 0 0 1 e f _ s c h rf_out rf_in c7 10pf l 1 l 7 dut c4 4.7f 16v c5 0.1f c6 10pf l1 c24 0.7pf c23 0.7pf c28 10pf c17 10pf c19 1f c18 1f c22 10f 50v c20 2.2f c21 0.1f l2 c26 0.7pf c25 0.7pf c27 0.7pf c11 10pf c13 1f c12 1f c16 10f 50v c14 2.2f c15 0.1f l 2 l 3 l 6 l 5 l 8 c8 4.7f 16v c9 0.1f c10 10pf r7 5.1k v l 11 l 12 l 13 l 14 l 15 l 16 l 17 l 9 l 10 v dd l 4 v dd r3 2k v r5 2k v r8 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v r1 1.2k v c1 0.001f qq1 lm7805 r6 5.1k v
data sheet 8 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution reference circuit (cont.) reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4, c8 capacitor, 4.7 f, 16 v digi-key pcs3475ct-nd c5, c9, c15, c21 capacitor, 0.1 f digi-key pcc104bct-nd c6, c10 ceramic capacitor, 10 pf atc 100a 100 c7, c28 ceramic capacitor, 10 pf atc 100b 100 c11, c17 capacitor, 10 pf avx 08051j100gbttr c12, c13, c18, c19 ceramic capacitor, 1 f digi-key 445-1411-1-nd c14, c20 capacitor, 2.2 f digi-key 445-1447-2-nd c16, c22 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c23, c24, c25, capacitor, 0.7 pf avx 08051j0r7bbttr c26, c27 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infinion technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3, r5 chip resistor 2 k-ohms digi-key p2kect-nd r6, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd r8 potentiometer 2 k-ohms digi-key 3224w-202etr-nd a192001ef_assy rf_in rf_out v dd v dd c3 c1 c7 c15 c12 c21 c28 c13 c14 c19 c18 c20 r6 r7 r3 r5 c9 c10 c5 c6 c11 c17 c27 c26 c24 c25 c23 c4 c8 r1 r2 c2 a192001in_01 ro4350_.030 a192001out_01 l1 l2 c22 qq1 q1 ro4350_.030 c16 r8 v dd *gerber files for this circuit available on request
data sheet 9 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution package outline specifications package h-36260-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: d = drain, s = source, g = gate. 3. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 4. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] 5. all tolerances 0.25 [0.01] / 0.127 [.005] unless specified otherwise. 6. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower c l c l h-36+37260-2_36260 / 04-25-08 0.0381 [.0015] -a- 22.350.23 [.880.009] 4.830.50 [.190.020] 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [r.060] 34.04 [1.340] d s g flange 13.72 [.540] 45 x 2.03 [.080] sph 1.57 [.062] 2x r1.63 [r.064] 4.110.38 [.162.015] 27.94 [1.100] c l 1.02 [.040] +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006
data sheet 10 of 11 rev. 05, 2008-05-15 ptfa192001e PTFA192001F confidential, limited internal distribution package outline specifications (cont.) package h-37260-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: d = drain, s = source, g = gate. 3. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 4. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] 5. all tolerances 0.25 [0.01] / 0.127 [.005] unless specified otherwise. 6. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006 c l c l h-36+37260-2_37260 / 04-25-08 sph 1.57 [.062] 23.370.51 [.920.020] 2x 12.70 [.500] 45 x 2.031 [.080] d g s -a- 4.110.38 [.162.015] lid 22.350.23 [.880.009] flange 23.11 [.910] 13.72 [.540] 4.830.50 [.190.020] 0.0381 [.0015] +0.381 4x r0.508 ?0.127 +.015 [r.020 ] ?.005 1.02 [.040]
data sheet 11 of 11 rev. 05, 2008-05-15 ptfa192001e/f confidential, limited internal distribution revision history: 2008-05-15 data sheet previous version: 2007-12-06, data sheet page subjects (major changes since last revision) 1, 3, 9, 10 update to product v4. update package outline diagrams. 1, 2 update specifications. goldmos ? is a registered trademark of infineon technologies ag. edition 2008-05-15 published by infineon technologies ag 81726 munich , germany ? 2006 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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